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| 1 Megabit (128K x 8-Bit) EEPROM VCC VSS RES OE CE WE RES A0 A6 Address Buffer and Latch Y Decoder Y Gating I/O Buffer and Input Latch Control Logic Timing High Voltage Generator I/O0 I/O7 RDY/Busy 28C011T A7 A16 X Decoder Memory Array Data Latch Memory Logic Diagram FEATURES: * 128k x 8-bit EEPROM * RAD-PAK(R) radiation hardened against natural space radiation * Total dose hardness: - > 100 krad (Si), depending upon space mission * Excellent Single Event Effects: - No Latchup > 120 MeV/mg/cm2 - SEU > 90 MeV/mg/cm2 read mode * Package: - 32-pin RAD-PAK(R) flat pack package - JEDEC-approved byte-wide pinout * High speed: - 120, 150, and 200 ns maximum access times available * High endurance: - 10,000 cycles/byte, 10-year data retention * Page write mode: - 1 to 128 byte page * Low power dissipation - 20 mW/MHz active (typical) - 110 W standby (maximum) * Screening per TM 5004 * QCI per TM5005 DESCRIPTION: Maxwell Technologies' 28C011T high-density 1 Megabit (128K x 8-Bit) EEPROM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 28C011T is capable of in-system electrical byte and page programmability. It has a 128-byte page programming function to make its erase and write operations faster. It also features Data Polling and a Ready / Busy signal to indicate the completion of erase and programming operations. In the 28C011T, hardware data protection is provided with the RES pin, in addition to noise protection on the WE signal and write inhibit on power on and off. Software data protection is implemented using the JEDEC optional standard algorithm. Maxwell Technologies' patented RAD-PAK(R) packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, RAD-PAK provides greater than 100 krad (Si) radiation dose tolerance. This product is available with screening up to Class S. 1000580 12.19.01 Rev 7 All data sheets are subject to change without notice 1 (858) 503-3300- Fax: (858) 503-3301- www.maxwell.com (c)2001 Maxwell Technologies All rights reserved. 1 Megabit (128K x 8-Bit) EEPROM TABLE 1. 28C011T PINOUT DESCRIPTION PIN 12-4, 27, 26, 23, 25, 4,28, 3, 31, 2 13-21 24 22 29 32 16 1 30 SYMBOL A0-A16 I/O 0 - 7 OE CE WE VCC VSS RDY/BUSY RES DESCRIPTION Address Data Input/Output Output Enable Chip Enable Write Enable Power Supply Ground Ready/Busy Reset 28C011T Memory TABLE 2. 28C011T ABSOLUTE MAXIMUM RATINGS PARAMETER Supply Voltage (Relative to VSS) Input Voltage (Relative to VSS) Operating Temperature Range Storage Temperature Range 1. VIN min = -3.0V for pulse width < 50ns. SYMBOL MIN MAX UNITS VCC VIN TOPR TSTG -0.6 -0.5 -55 -65 1 +7.0 +7.0 +125 +150 V V C C TABLE 3. DELTA LIMITS PARAMETER ICC1 ICC2 ICC3 ILI ILO VARIATION 10% 10% 10% 10% 10% 1000580 12.19.01 Rev 7 All data sheets are subject to change without notice 2 (c)2001 Maxwell Technologies All rights reserved. 1 Megabit (128K x 8-Bit) EEPROM TABLE 4. 28C011T RECOMMENDED OPERATING CONDITIONS PARAMETER Supply Voltage Input Voltage RES_PIN Thermal Impedance -- Flat Package Operating Temperature Range 1. VIL min = 1.0V for pulse width < 50 ns SYMBOL VCC VIL VIH VH MIN 4.5 -0.31 2.2 VCC -0.5 --55 28C011T MAX 5.5 0.8 VCC +0.3 VCC +1 2.17 +125 C/W C UNITS V V JC TOPR TABLE 5. 28C011T CAPACITANCE (TA = 25 C, f = 1 MHZ) PARAMETER Input Capacitance: VIN = 0V 1. Guaranteed by design. 1 1 SYMBOL CIN COUT MIN --- MAX 6 12 UNITS pF pF Memory Output Capacitance: VOUT = 0V TABLE 6. 28C011T DC ELECTRICAL CHARACTERISTICS (VCC = 5V 10%, TA = -55 TO +125 C, UNLESS OTHERWISE SPECIFIED) PARAMETER Input Leakage Current Output Leakage Current Standby VCC Current Operating VCC Current TEST CONDITION VCC = 5.5V, VIN = 5.5V VCC = 5.5V, VOUT = 5.5V/0.4V CE = VCC CE = VIH IOUT = 0mA, Duty = 100%, Cycle = 1s at VCC = 5.5V IOUT = 0mA, Duty = 100%, Cycle = 150ns at VCC = 5.5V Input Voltage RES_PIN Output Voltage IOL = 2.1 mA IOH = -0.4 mA 1. ILI on RES = 100 uA max. VIL VIH VH VOL VOH SYMBOL IIL ILO ICC1 ICC2 ICC3 MIN -------2.2 VCC -0.5 -2.4 MAX 21 2 20 1 15 50 0.8 --0.4 -V V UNITS A A A mA mA 1000580 12.19.01 Rev 7 All data sheets are subject to change without notice 3 (c)2001 Maxwell Technologies All rights reserved. 1 Megabit (128K x 8-Bit) EEPROM 28C011T TABLE 7. 28C011T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION 1 (VCC = 5V + 10%, TA = -55 TO +125 C) PARAMETER Address Access Time CE = OE = VIL, WE = VIH -120 -150 -200 Chip Enable Access Time OE = VIL, WE = VIH -120 -150 -200 Output Enable Access Time CE = VIL, WE = VIH -120 -150 -200 Output Hold to Address Change CE = OE = VIL, WE = VIH -120 -150 -200 Output Disable to High-Z 2 CE = VIL, WE = VIH -120 -150 -200 CE = OE = VIL, WE = VIH -120 -150 -200 RES to Output Delay3 CE = OE = VIL, WE = VIH -120 -150 -200 SYMBOL tACC ---tCE ---tOE 0 0 0 tOH 0 0 0 tDF ---ns 0 0 0 0 0 0 50 50 60 300 350 450 ns 0 0 0 400 450 650 75 75 100 ns 120 150 200 ns 120 150 200 ns MIN MAX UNITS ns Memory tDFR tRR 1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20ns; output load - 1 TTL gate + 100pF (including scope and jig); reference levels for measuring timing - 0.8V/1.8V. 2. tDF and tDFR are defined as the time at which the output becomes an open circuit and data is no longer driven. 3. Guaranteed by design. 1000580 12.19.01 Rev 7 All data sheets are subject to change without notice 4 (c)2001 Maxwell Technologies All rights reserved. 1 Megabit (128K x 8-Bit) EEPROM 28C011T TABLE 8. 28C011T AC ELECTRICAL CHARACTERISTICS FOR BYTE ERASE AND BYTE WRITE OPERATIONS (VCC = 5V + 10%, TA = -55 TO +125 C) PARAMETER Address Setup Time -120 -150 -200 Chip Enable to Write Setup Time (WE controlled) -120 -150 -200 Write Pulse Width CE controlled -120 -150 -200 WE controlled -120 -150 -200 Address Hold Time -120 -150 -200 Data Setup Time -120 -150 -200 Data Hold Time -120 -150 -200 Chip Enable Hold Time (WE controlled) -120 -150 -200 Write Enable to Write Setup Time (CE controlled) -120 -150 -200 Write Enable Hold Time (CE controlled) -120 -150 -200 SYMBOL tAS MIN1 0 0 0 0 0 0 MAX ---ns ---ns 200 250 350 150 250 350 150 150 200 75 120 200 10 10 20 0 0 0 ---UNITS ns tCS tCW tWP Memory ---ns ---ns ---ns ------ns tAH tDS tDH tCH tWS 0 0 0 tWH 0 0 0 ---- ns ns ---- 1000580 12.19.01 Rev 7 All data sheets are subject to change without notice 5 (c)2001 Maxwell Technologies All rights reserved. 1 Megabit (128K x 8-Bit) EEPROM (VCC = 5V + 10%, TA = -55 TO +125 C) PARAMETER Output Enable to Write Setup Time -120 -150 -200 Output Enable Hold Time -120 -150 -200 Write Cycle Time2 -120 -150 -200 Data Latch Time -120 -150 -200 Byte Load Window -120 -150 -200 Byte Load Cycle -120 -150 -200 Time to Device Busy -120 -150 -200 Write Start Time3 -120 -150 -200 RES to Write Setup Time -120 -150 -200 VCC to RES Setup Time4 -120 -150 -200 1. Use this device in a longer cycle than this value. SYMBOL tOES MIN1 0 0 0 0 0 0 ---250 300 400 100 100 200 0.55 0.55 0.95 100 120 170 150 150 250 100 100 200 1 1 3 MAX ---- 28C011T UNITS ns TABLE 8. 28C011T AC ELECTRICAL CHARACTERISTICS FOR BYTE ERASE AND BYTE WRITE OPERATIONS tOEH ns ---ms 10 10 20 ns ---s ---s 30 30 30 ns ---ns ---s ---s ---- tWC tDL Memory tBL tBLC tDB tDW tRP tRES 2. tWC must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the internal write operation within this value. 1000580 12.19.01 Rev 7 All data sheets are subject to change without notice 6 (c)2001 Maxwell Technologies All rights reserved. 1 Megabit (128K x 8-Bit) EEPROM 3. Next read or write operation can be initiated after tDW if polling techniques or RDY/BUSY are used. 4. Guaranteed by design. 28C011T TABLE 9. 28C011T MODE SELECTION 1, 2 PARAMETER Read Standby Write Deselect Write Inhibit Data Polling Program 1. X = Don't care. CE VIL VIH VIL VIL X X VIL X OE VIL X VIH VIH X VIL VIL X WE VIH X VIL VIH VIH X VIH X I/O DOUT High-Z DIN High-Z --Data Out (I/O7) High-Z RES VH X VH VH X X VH VIL RDY/BUSY High-Z High-Z High-Z --> VOL High-Z --VOL High-Z Memory 2. Refer to the recommended DC operating conditions. FIGURE 1. READ TIMING WAVEFORM 1000580 12.19.01 Rev 7 All data sheets are subject to change without notice 7 (c)2001 Maxwell Technologies All rights reserved. 1 Megabit (128K x 8-Bit) EEPROM FIGURE 2. BYTE WRITE TIMING WAVEFORM(1) (WE CONTROLLED) 28C011T Memory FIGURE 3. BYTE WRITE TIMING WAVEFORM(2) (CE CONTROLLED) 1000580 12.19.01 Rev 7 All data sheets are subject to change without notice 8 (c)2001 Maxwell Technologies All rights reserved. 1 Megabit (128K x 8-Bit) EEPROM FIGURE 4. PAGE WRITE TIMING WAVEFORM(1) (WE CONTROLLED) 28C011T Memory FIGURE 5. PAGE WRITE TIMING WAVEFORM(2) (CE CONTROLLED) 1000580 12.19.01 Rev 7 All data sheets are subject to change without notice 9 (c)2001 Maxwell Technologies All rights reserved. 1 Megabit (128K x 8-Bit) EEPROM FIGURE 6. DATA POLLING TIMING WAVEFORM 28C011T FIGURE 7. SOFTWARE DATA PROTECTION TIMING WAVEFORM(1) (IN PROTECTION MODE) Memory FIGURE 8. SOFTWARE DATA PROTECTION TIMING WAVEFORM(2) (IN NON-PROTECTION MODE) 1000580 12.19.01 Rev 7 All data sheets are subject to change without notice 10 (c)2001 Maxwell Technologies All rights reserved. 1 Megabit (128K x 8-Bit) EEPROM EEPROM APPLICATION NOTES 28C011T This application note describes the programming procedures for the EEPROM modules and with details of various techniques to preserve data protection. Automatic Page Write Page-mode write feature allows 1 to 128 bytes of data to be written into the EEPROM in a single write cycle, and allows the undefined data within 128 bytes to be written corresponding to the undefined address (A0 to A6). Loading the first byte of data, the data load window opens 30s for the second byte. In the same manner each additional byte of data can be loaded within 30s. In case CE and WE are kept high for 100 s after data input, EEPROM enters erase and write mode automatically and only the input data are written into the EEPROM. WE CE Pin Operation During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of WE or CE. Data Polling Data Polling function allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a write cycle, an inversion of the last byte of data to be loaded outputs from I/O 7 to indicate that the EEPROM is performing a write operation. Memory RDY/Busy Signal RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal has high impedance except in write cycle and is lowered to VOL after the first write signal. At the-end of a write cycle, the RDY/Busy signal changes state to high impedance. RES Signal When RES is LOW, the EEPROM cannot be read and programmed. Therefore, data can be protected by keeping RES low when VCC is switched. RES should be high during read and programming because it doesn't provide a latch function. Data Protection To protect the data during operation and power on/off, the EEPROM has the internal functions described below. 1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation. 1000580 12.19.01 Rev 7 All data sheets are subject to change without notice 11 (c)2001 Maxwell Technologies All rights reserved. 1 Megabit (128K x 8-Bit) EEPROM 28C011T During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mistake. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its width is 20ns or less in programming mode. Be careful not to allow noise of a width of more than 20ns on the control pins. 2. Data Protection at VCC on/off When VCC is turned on or off, noise on the control pins generated by external circuits, such as CPUs, may turn the EEPROM to programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in unprogrammable state during VCC on/off by using a CPU reset signal to RES pin. Memory RES should be kept at VSS level when VCC is turned on or off. The EEPROM breaks off programming operation when RES become low, programming operation doesn't finish correctly in case that RES falls low during programming operation. RES should be kept high for 10 ms after the last data input. 1000580 12.19.01 Rev 7 All data sheets are subject to change without notice 12 (c)2001 Maxwell Technologies All rights reserved. 1 Megabit (128K x 8-Bit) EEPROM 3. Software Data Protection 28C011T The software data protection function is to prevent unintentional programming caused by noise generated by external circuits. In software data protection mode, 3 bytes of data must be input before write data as follows. These bytes can switch the nonprotection mode to the protection mode. Software data protection mode can be canceled by inputting the following 6 bytes. Then, the EEPROM turns to the non-protection mode and can write data normally. However, when the data is input in the canceling cycle, the data cannot be written. Memory 1000580 12.19.01 Rev 7 All data sheets are subject to change without notice 13 (c)2001 Maxwell Technologies All rights reserved. 1 Megabit (128K x 8-Bit) EEPROM 28C011T e Memory 32-PIN RAD-PAK(R) FLAT PACKAGE SYMBOL A b c D E E1 E2 E3 e L Q S1 N F32-03 Note: All dimensions in inches. 1000580 12.19.01 Rev 7 DIMENSION MIN 0.117 0.015 0.003 -0.404 -0.234 0.030 0.350 0.021 0.005 NOM 0.130 0.017 0.005 0.820 0.410 -0.240 0.085 0.050BSC 0.370 0.033 0.027 32 0.390 0.036 -MAX 0.143 0.022 0.009 0.830 0.416 0.440 --- All data sheets are subject to change without notice 14 (c)2001 Maxwell Technologies All rights reserved. 1 Megabit (128K x 8-Bit) EEPROM Important Notice: 28C011T These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies functionality by testing key parameters either by 100% testing, sample testing or characterization. The specifications presented within these data sheets represent the latest and most accurate information available to date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no responsibility for the use of this information. Maxwell Technologies' products are not authorized for use as critical components in life support devices or systems without express written approval from Maxwell Technologies. Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Technologies. Maxwell Technologies' liability shall be limited to replacement of defective parts. Memory 1000580 12.19.01 Rev 7 All data sheets are subject to change without notice 15 (c)2001 Maxwell Technologies All rights reserved. 1 Megabit (128K x 8-Bit) EEPROM Product Ordering Options Model Number 28C011T XX F X -XX Feature Access Time 28C011T Option Details 12 = 120 ns (for example) 15 = 150 ns 20 = 200 ns Monolithic S = Maxwell Class S B = Maxwell Class B E = Engineering (testing @ +25C) I = Industrial (testing @ -55C, +25C, +125C) Screening Flow Memory Package F = Flat Pack Radiation Feature RP = RAD-PAK(R) package RT1 = Guaranteed to 10 krad at die level RT2 = Guaranteed to 25 krad at die level RT4 = Guaranteed to 40 krad at die level Base Product Nomenclature 1 Megabit (128K x 8-Bit) EEPROM 1000580 12.19.01 Rev 7 All data sheets are subject to change without notice 16 (c)2001 Maxwell Technologies All rights reserved. |
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